The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2024
Filed:
Apr. 13, 2022
Applicant:
Db Hitek Co., Ltd., Bucheon-si, KR;
Inventor:
Jun Hee Cho, Cheongju-si, KR;
Assignee:
DB HiTek, Co., Ltd., Bucheon-si, KR;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/8234 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7816 (2013.01); H01L 21/823456 (2013.01); H01L 29/0696 (2013.01); H01L 29/1095 (2013.01); H01L 29/402 (2013.01); H01L 29/66681 (2013.01);
Abstract
Disclosed is a semiconductor device and a method for manufacturing the same and, more particularly, a semiconductor device and a method for manufacturing the same seeking to improve on-resistance and breakdown voltage characteristics compared to existing semiconductor structures by forming an air gap under a gate field plate adjacent to a gate electrode or over a drift region of the semiconductor device.