The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2024
Filed:
Oct. 07, 2021
Applicant:
Imec Vzw, Leuven, BE;
Inventor:
Aryan Afzalian, Leuven, BE;
Assignee:
IMEC VZW, Leuven, BE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/772 (2006.01); H03K 17/687 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7722 (2013.01); H03K 17/687 (2013.01);
Abstract
A field-effect transistor and a method for controlling such is provided herein. The field-effect transistor includes a source terminal and a drain terminal arranged on a first side of a semiconductor layer and a single gate arranged on a second side of the semiconductor layer opposite the first side. The gate and the source terminal are arranged to overlap with a first common region of the semiconductor layer and the gate and the drain terminal are arranged to overlap with a second common region of the semiconductor layer.
Afzalian, Aryan. (2024). Dynamically doped field-effect transistor and a method for controlling such (U.S. Patent No. 12154979). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12154979
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile