The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 26, 2024

Filed:

Nov. 10, 2021
Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventors:

Hiroshi Ono, Setagaya, JP;

Yosuke Kajiwara, Yokohama, JP;

Masahiko Kuraguchi, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 29/20 (2006.01); H01L 29/43 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66431 (2013.01); H01L 29/2003 (2013.01); H01L 29/432 (2013.01); H01L 29/778 (2013.01);
Abstract

According to one embodiment, a semiconductor device includes a semiconductor member, a first conductive member, a first electrode, a first insulating member, and a second insulating member. The semiconductor member includes a first partial region, a second partial region, and a third partial region. The first partial region is between the second partial region the third partial region. The first conductive member includes a first conductive portion. The first conductive portion is between the second partial region and the third partial region. The first electrode is electrically connected to the first conductive member. The first electrode includes a first electrode portion, a second electrode portion, and a third electrode portion. The first insulating member includes a first insulating region, a second insulating region, and a third insulating region. The second insulating member includes a first insulating portion and a second insulating portion.


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