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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12154950 B1

PDFFull Text
Date of Patent:
Nov. 26, 2024

Filed:

Nov. 19, 2020

Transistor, ternary inverter comprising same, and transistor manufacturing method

Applicant:

Unist (Ulsan National Institute of Science and Technology), Ulsan, KR;

Inventors:

Kyung Rok Kim, Ulsan, KR;

Ji Won Chang, Ulsan, KR;

Jae Won Jeong, Ulsan, KR;

Youngeun Choi, Ulsan, KR;

Wooseok Kim, Ulsan, KR;

Assignee:

UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY), , KR;

Attorney:

Klarquist Sparkman, LLP

Primary Examiner:

Sheikh Maruf

Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 27/092 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1083 (2013.01); H01L 27/0928 (2013.01); H01L 29/6684 (2013.01); H01L 29/78391 (2014.09);
Abstract

Provided is a transistor including: a constant current formation layer; a channel layer provided on the constant current formation layer; a pair of source/drain regions spaced apart from each other, with the channel layer therebetween on the constant current formation layer; a gate electrode provided on the channel layer; and a gate ferroelectric film provided between the gate electrode and the channel layer.

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Kim, Kyung. (2024). Transistor, ternary inverter comprising same, and transistor manufacturing method (U.S. Patent No. 12154950). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12154950

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