The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2024
Filed:
Apr. 10, 2020
Optohub Co., Ltd, Nagano, JP;
Optohub Co., Ltd, Nagano, JP;
Abstract
The semiconductor image sensor of the present invention comprises a light receiving element formed in a silicon substrate under an insulation film of an SOI substrate comprising the silicon substrate, the insulation film formed on the silicon substrate, and a semiconductor layer formed on the insulation film, and composed of a pn junction diode formed in a vertical direction to a main surface of the silicon substrate and having sensitivity to near-infrared light, and a high voltage generating circuit configured to generate an applied voltage for applying a reverse bias voltage to the pn junction diode, and an impurity concentration of the silicon substrate is in a range of 1×10/cmto 1×10/cm, a film thickness is in a range of 300 μm to 700 μm, and the applied voltage is in a range of 10 V to 60 V.