The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 26, 2024

Filed:

Jul. 29, 2021
Applicant:

Huawei Technologies Co., Ltd., Shenzhen, CN;

Inventors:

Shiqun Gu, San Diego, CA (US);

Rui Niu, Beijing, CN;

Tianqiang Huang, Dongguan, CN;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 25/10 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/48 (2006.01); H01L 23/498 (2006.01); H01L 23/538 (2006.01); H01L 25/00 (2006.01);
U.S. Cl.
CPC ...
H01L 25/105 (2013.01); H01L 23/3157 (2013.01); H01L 23/481 (2013.01); H01L 23/49816 (2013.01); H01L 23/49822 (2013.01); H01L 23/49838 (2013.01); H01L 23/5383 (2013.01); H01L 23/5386 (2013.01); H01L 24/16 (2013.01); H01L 24/17 (2013.01); H01L 24/24 (2013.01); H01L 25/50 (2013.01); H01L 2224/16235 (2013.01); H01L 2224/17134 (2013.01); H01L 2224/24145 (2013.01); H01L 2225/1023 (2013.01); H01L 2225/1041 (2013.01); H01L 2225/1058 (2013.01); H01L 2924/1433 (2013.01); H01L 2924/14335 (2013.01); H01L 2924/1434 (2013.01); H01L 2924/182 (2013.01); H01L 2924/30105 (2013.01); H01L 2924/30107 (2013.01);
Abstract

A packaged IC includes a fanout layer, an Application Processor (AP) die having a first surface residing substantially adjacent a first surface of the fanout layer, a Redistribution Layer (RDL) having a first surface coupled to a second surface of the AP die Process, and high bandwidth memory coupled to a second surface of the RDL and configured to communicate wirelessly with the AP die. The packaged IC further includes an encapsulant surrounding a substantial portion of the high bandwidth memory, the RDL, and the AP die, the encapsulant contacting the fanout layer on a first side and having an exposed second side, a plurality of conductive posts extending from the fanout layer to the RDL through a portion of the encapsulant, and a plurality of Through Mold Vias (TMVs) extending between the fanout layer and the exposed second side of the encapsulant.


Find Patent Forward Citations

Loading…