The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2024
Filed:
Sep. 29, 2021
Applicant:
Fuji Electric Co., Ltd., Kawasaki, JP;
Inventors:
Makoto Utsumi, Matsumoto, JP;
Masaki Miyazato, Matsumoto, JP;
Assignee:
FUJI ELECTRIC CO., LTD., Kawasaki, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); G01R 31/26 (2020.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/16 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 22/32 (2013.01); G01R 31/2644 (2013.01); H01L 22/14 (2013.01); H01L 29/063 (2013.01); H01L 29/1095 (2013.01); H01L 29/1608 (2013.01); H01L 29/7813 (2013.01);
Abstract
A portion of a source pad is exposed in an opening of a passivation film. In the exposed portion of the source pad, a wiring region in which a package wiring member is to be bonded and a probe region that is a region different from the wiring region are provided. The probe region has a probe mark of a probe for an energization inspection. An area of the probe mark that overlaps the wiring region is at most 30% of an entire area of the wiring region in a plan view of the silicon carbide semiconductor device.