The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 26, 2024

Filed:

Dec. 15, 2021
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

June Young Kim, Seoul, KR;

Jin Young Choi, Seoul, KR;

Yong-Seok Hwang, Seoul, KR;

Kyoung-Jae Chung, Seoul, KR;

Bon-Woong Koo, Andover, MA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/09 (2006.01); C23C 14/48 (2006.01); C23C 14/52 (2006.01); H01J 37/08 (2006.01); H01J 37/317 (2006.01);
U.S. Cl.
CPC ...
H01J 37/09 (2013.01); C23C 14/48 (2013.01); C23C 14/52 (2013.01); H01J 37/08 (2013.01); H01J 37/3171 (2013.01);
Abstract

An IHC ion source having increased plasma potential is disclosed. In certain embodiments, the extraction plate is biased at a higher voltage than the body of the arc chamber to achieve the higher plasma potential. Shielding electrodes may be utilized to remove the interaction between the biased extraction plate and the plasma. The cross-section of the arc chamber may be circular or nearly circular to facilitate the rotation of electrons in the chamber. In another embodiment, biased electrodes may be disposed in the chamber on opposite sides of the extraction aperture in the height direction. In some embodiments, only one of the electrodes is biased at a voltage greater than the body of the arc chamber.


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