The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 26, 2024

Filed:

Oct. 29, 2021
Applicant:

Wuhan China Star Optoelectronics Technology Co., Ltd., Wuhan, CN;

Inventors:

Haiming Cao, Wuhan, CN;

Yanqing Guan, Wuhan, CN;

Chao Tian, Wuhan, CN;

Fei Ai, Wuhan, CN;

Guanghui Liu, Wuhan, CN;

Zhifu Li, Wuhan, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G09G 3/20 (2006.01); G09G 3/3266 (2016.01); G09G 3/36 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
G09G 3/20 (2013.01); G09G 3/3266 (2013.01); G09G 3/3674 (2013.01); G09G 3/3677 (2013.01); G09G 2310/0267 (2013.01); G09G 2330/021 (2013.01); H01L 29/786 (2013.01); H01L 29/7869 (2013.01);
Abstract

A gate driving circuit and a display panel are disclosed. A pull-up control module and a pull-down module of each stage gate driving unit are connected to a first node. A thin film transistor in the pull-up control module and/or pull-down module that is connected to the first node is an oxide thin film transistor, such that a leakage current of the first node is reduced due to the advantage of the small off-state leakage current of the oxide thin film transistor. Therefore, the voltage level of the first node can remain stable during a pull-up stage and a touch suspension stage.


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