The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 26, 2024

Filed:

Aug. 21, 2020
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Radwanul Hasan Siddique, Pasadena, CA (US);

Hyuck Choo, Yongin-Si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 33/553 (2006.01); B05D 1/00 (2006.01); G01N 21/64 (2006.01); G01N 33/543 (2006.01); G06F 1/16 (2006.01);
U.S. Cl.
CPC ...
G01N 33/553 (2013.01); B05D 1/005 (2013.01); G01N 21/6428 (2013.01); G01N 21/648 (2013.01); G01N 33/54393 (2013.01); G01N 2333/515 (2013.01); G01N 2333/62 (2013.01); G01N 2333/974 (2013.01); G06F 1/1684 (2013.01); H04M 2250/12 (2013.01);
Abstract

A metasurface device includes a dielectric layer, an aluminum nanodisk and an aluminum layer. The dielectric layer includes top and bottom surfaces that are opposite each other. The dielectric layer also includes at least one ring-like cavity that extends between the top and bottom surfaces of the dielectric layer. The aluminum nanodisk is formed in the at least one ring-like cavity in the dielectric layer. The aluminum layer is formed on the dielectric layer and includes at least one ring-like cavity that extends between top and bottom surfaces of the aluminum layer. Each ring-like cavity in the aluminum layer corresponds to a ring-like cavity in the dielectric layer. Two or more analytes may emit fluorescence in response to light of a predetermined wavelength being incident on the metasurface device and in which the two or more analytes are present at the dielectric layer.


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