The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 26, 2024

Filed:

Mar. 07, 2022
Applicant:

University of South Carolina, Columbia, SC (US);

Inventors:

Mathew L. Kelley, Columbia, SC (US);

Andrew B. Greytak, Columbia, SC (US);

M V S Chandrashekhar, Columbia, SC (US);

Assignee:

UNIVERSITY OF SOUTH CAROLINA, Columbia, SC (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 21/64 (2006.01);
U.S. Cl.
CPC ...
G01N 21/6452 (2013.01); G01N 21/6456 (2013.01); G01N 2021/6423 (2013.01);
Abstract

Spatially resolved Fourier Transform Impedance Spectroscopy (FTIS) is disclosed to spatially map and quickly build the frequency response of optoelectronic devices using optical probes. The transfer function of a linear system is the Fourier transform of its impulse response, which may be obtained from transient photocurrent measurements of devices such as photodetectors and solar cells. We apply FTIS to a PbS colloidal quantum dot (QD)/SiC heterojunction photodiode and corroborate results using intensity-modulated photocurrent spectroscopy. The cutoff frequencies of the QD/SiC devices were as high as ˜10 kHz, demonstrating their utility in advanced flexible and thin film electronics. The practical frequencies for FTIS lie in the mHz-kHz range, ideal for composite or novel materials such as QD films that are dominated by interfacial trap states.


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