The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 26, 2024

Filed:

Feb. 07, 2020
Applicants:

National University Corporation Tokai National Higher Education and Research System, Nagoya, JP;

Osaka University, Suita, JP;

Nichia Corporation, Anan, JP;

Inventors:

Tsukasa Torimoto, Nagoya, JP;

Tatsuya Kameyama, Nagoya, JP;

Susumu Kuwabata, Ibaraki, JP;

Taro Uematsu, Suita, JP;

Daisuke Oyamatsu, Tokushima, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C01G 15/00 (2006.01); B82Y 20/00 (2011.01); B82Y 40/00 (2011.01); C09K 11/58 (2006.01); C09K 11/62 (2006.01); H01L 33/50 (2010.01);
U.S. Cl.
CPC ...
C01G 15/006 (2013.01); C09K 11/582 (2013.01); C09K 11/621 (2013.01); B82Y 20/00 (2013.01); B82Y 40/00 (2013.01); C01P 2004/30 (2013.01); C01P 2004/64 (2013.01); C01P 2006/60 (2013.01); H01L 33/502 (2013.01);
Abstract

Provided is a method for producing a semiconductor nanoparticle including preparing a mixture containing a Ag salt, a salt containing at least one of In and Ga, and an organic solvent; raising the temperature of the mixture to a raised temperature in a range of from 120° C. to 300° C.; and adding a supply source of S to the mixture at the raised temperature in such a manner that a ratio of a number of S atoms to a number of Ag atoms in the mixture increases at a rate of not more than 10/min.


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