Memory device including mixed oxide charge trapping materials and methods for forming the same

Abstract

A memory device includes an alternating stack of insulating layers and electrically conductive layers located over a substrate, a memory opening fill structure including a vertical semiconductor channel and a memory film. The memory film includes a tunneling dielectric layer in contact with the vertical semiconductor channel, a first vertical stack of first dielectric oxide material portions located at levels of the insulating layers and including a dielectric oxide material of a first element, and a second vertical stack of second dielectric oxide material portions located at levels of the electrically conductive layers and including a mixed dielectric oxide material that is a dielectric oxide material of the first element and a second element.