The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 19, 2024

Filed:

Dec. 07, 2022
Applicant:

Efficient Power Conversion Corporation, El Segundo, CA (US);

Inventors:

Edward Lee, Fullerton, CA (US);

Michael Chapman, Long Beach, CA (US);

Ravi Ananth, Laguna Niguel, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/06 (2006.01);
U.S. Cl.
CPC ...
H03K 17/063 (2013.01); H03K 2217/0063 (2013.01); H03K 2217/0072 (2013.01);
Abstract

A bootstrapping circuit that utilizes multiple pre-charged capacitor voltages and applies the capacitor voltages to the high side FET of a GaN bootstrapping driver. During the pre-charging phase of the bootstrapping driver, multiple capacitors are charged in parallel to the supply voltage. During the driving phase of the bootstrapping driver, the capacitors are connected in series through a number of FETs and connected to the gate terminal of the high side FET of the bootstrapping driver. As a result, the gate-to-source voltage of the high side FET is equal to or greater than the supply voltage during the driving phase, increasing the driving capability of the high side FET and reducing the total required capacitance and die area of the bootstrapping driver.


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