The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2024
Filed:
Aug. 13, 2019
Applicant:
Ams Sensors Asia Pte. Ltd., Singapore, SG;
Inventor:
Jean-Francois Seurin, Princeton Junction, NJ (US);
Assignee:
AMS SENSORS ASIA PTE. LTD., Singapore, SG;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/183 (2006.01); G01S 7/481 (2006.01); G01S 17/08 (2006.01); H01S 5/34 (2006.01); H01S 5/42 (2006.01);
U.S. Cl.
CPC ...
H01S 5/18361 (2013.01); G01S 7/4815 (2013.01); G01S 17/08 (2013.01); H01S 5/18305 (2013.01); H01S 5/3416 (2013.01); H01S 5/423 (2013.01);
Abstract
The disclosure describes VCSELs operable to produce very narrow divergent light beams. The narrow divergent beam can be obtained, in part, by incorporating an additional epitaxial layer so as to increase the cavity length of the VCSEL. The increased cavity length can result in higher power in fewer larger diameter transverse modes, which can significantly reduce the output beam divergence. The additional epitaxial layer can be incorporated, for example, into a top-emitting VCSEL or bottom-emitting VCSEL.