The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 19, 2024

Filed:

Mar. 24, 2022
Applicant:

Meta Platforms Technologies, Llc, Menlo Park, CA (US);

Inventors:

Alexander Tonkikh, Cork, IE;

Salim Boutami, Seattle, WA (US);

Sophia Antonia Fox, Cork, IE;

Assignee:

META PLATFORMS TECHNOLOGIES, LLC, Menlo Park, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/44 (2010.01); H01L 27/15 (2006.01); H01L 33/00 (2010.01); H01L 33/24 (2010.01); H01L 33/30 (2010.01); H01L 33/58 (2010.01); H01L 33/60 (2010.01); H01L 33/62 (2010.01);
U.S. Cl.
CPC ...
H01L 33/44 (2013.01); H01L 27/156 (2013.01); H01L 33/0062 (2013.01); H01L 33/24 (2013.01); H01L 33/30 (2013.01); H01L 33/58 (2013.01); H01L 33/60 (2013.01); H01L 33/62 (2013.01); H01L 2933/0025 (2013.01); H01L 2933/0058 (2013.01); H01L 2933/0066 (2013.01);
Abstract

A micro-light emitting diode includes a semiconductor mesa structure that includes at least a portion of an n-type semiconductor layer, an active region configured to emit visible light, and a p-type semiconductor layer. The micro-LED device also includes an insulator layer that includes an undoped semiconductor passivation layer grown on sidewalls of the semiconductor mesa structure, and a dielectric passivation layer characterized by a refractive index lower than a refractive index of the undoped semiconductor passivation layer. The micro-LED device further includes a reflective metal layer deposited on the dielectric passivation layer, and a micro-lens configured to collimate the visible light emitted by the active region, where a ratio between a width of the micro-lens and a width of the active region may be greater than about 1.5.


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