The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2024
Filed:
Jul. 25, 2019
China Triumph International Engineering Co., Ltd., Shanghai, CN;
Ctf Solar Gmbh, Dresden, DE;
Shou Peng, Shanghai, CN;
Xinjian Yin, Shanghai, CN;
Ganhua Fu, Shanghai, CN;
Daniele Menossi, Dresden, DE;
Michael Harr, Kelkheim-Ruppertshain, DE;
Bastian Siepchen, Dresden, DE;
China Triumph International Engineering Co., Ltd., Shanghai, CN;
CTF Solar GmbH, Dresden, DE;
Abstract
The present invention proposes a method to form a double-graded CdSeTe thin film. The method comprises providing a base substrate, forming a first CdSeTelayer having a first amount wof selenium in it, forming a second CdSeTelayer having a second amount wof selenium in it and forming a third CdSeTelayer having a third amount wof selenium in it. The second amount wlies in the range between 0.25 and 0.4, whereas each of the amounts wand wlies in the range extending from 0 to 1. According to the present invention, the energy gap in the first and the third CdSeTelayers is equal to or higher than 1.45 eV and the energy gap in the second CdSeTelayer lies in the range between 1.38 eV and 1.45 eV and is smaller than the energy gap in the first and the third CdSeTelayers.