The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 19, 2024

Filed:

Dec. 17, 2019
Applicant:

Nippon Telegraph and Telephone Corporation, Tokyo, JP;

Inventors:

Yoshiho Maeda, Tokyo, JP;

Tatsuro Hiraki, Tokyo, JP;

Takuma Aihara, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/105 (2006.01); G02B 6/136 (2006.01); H01S 5/026 (2006.01); G02B 6/12 (2006.01); G02B 6/122 (2006.01);
U.S. Cl.
CPC ...
H01L 31/105 (2013.01); G02B 6/136 (2013.01); H01S 5/0262 (2013.01); G02B 2006/12061 (2013.01); G02B 2006/12078 (2013.01); G02B 2006/12121 (2013.01); G02B 6/1228 (2013.01);
Abstract

A light receiving device includes, on a substrate, a Si waveguide core provided in a dielectric layer, a first i-type waveguide clad, an i-type core layer, a second i-type waveguide clad, p-type layers disposed on one side of a side surface of a layered structure in a light waveguide direction, the layered structure including the first i-type waveguide clad, the i-type core layer, and the second i-type waveguide clad, n-type layers disposed on the other side, and an electrode on a surface of each of the n-type layers. A width of the Si waveguide core is set to be able to suppress absorption of light in a vicinity of an input edge of the i-type core layer.


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