The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 19, 2024

Filed:

Mar. 31, 2021
Applicant:

Canon Kabushiki Kaisha, Tokyo, JP;

Inventor:

Masashi Kusukawa, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 31/0392 (2006.01);
U.S. Cl.
CPC ...
H01L 31/03921 (2013.01); H01L 27/14643 (2013.01); H01L 27/14698 (2013.01);
Abstract

A photoelectric conversion apparatus includes a semiconductor substrate having a first surface and a second surface, a plurality of photoelectric conversion regions including an impurity of a first conductivity type and arranged at the semiconductor substrate, a trench arranged between the photoelectric conversion regions, an impurity region including an impurity of a second conductivity type opposite to the first conductivity type and arranged along a sidewall of the trench, and a first film arranged at the first surface of the semiconductor substrate and the sidewall of the trench. The impurity region includes a first region with an impurity concentration of a first concentration and a second region with an impurity concentration of a second concentration lower than the first concentration, and a distance between the first surface and the first region is smaller than a distance between the first surface and the second region.


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