The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2024
Filed:
May. 12, 2021
Shenzhen Adaps Photonics Technology Co. Ltd., Shenzhen, CN;
Shenzhen Adaps Photonics Technology Co. LTD., Shenzhen, CN;
Abstract
A photodetector, a preparation method for a photodetector, a photodetector array and a photodetection terminal. The photodetector comprises a substrate () and an optical resonant cavity () formed on the substrate (). The optical resonant cavity () may comprise: a light absorption layer () having a light-entrance outer surface and a bottom outer surface which are opposite to each other, and an outer sidewall located between the light-entrance surface and the bottom surface; a light-strap structural layer () covering the light-entrance surface; and a light-reflection structural layer () covering the bottom outer surface and/or the outer sidewall of the light absorption layer (), wherein the light-reflection structural layer () is configured to reflect external light entering the optical resonant cavity () by means of the light-trap structural layer () to increase a light propagation distance of the external light in the light absorption layer (), thereby effectively improving the photon absorption efficiency of the photodetector.