The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 19, 2024

Filed:

Dec. 06, 2021
Applicant:

Japan Display Inc., Tokyo, JP;

Inventors:

Kentaro Miura, Tokyo, JP;

Hajime Watakabe, Tokyo, JP;

Ryo Onodera, Tokyo, JP;

Assignee:

JAPAN DISPLAY INC., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01); H01L 29/6675 (2013.01); H01L 29/78672 (2013.01);
Abstract

According to one embodiment, a method for manufacturing a semiconductor device includes forming a first insulating layer above a polycrystalline silicon semiconductor, forming an oxide semiconductor on the first insulating layer, forming a second insulating layer on the oxide semiconductor, forming contact holes penetrating to the polycrystalline silicon semiconductor in insulating layers including the first insulating layer and the second insulating layer, forming a metal film on the second insulating layer, forming a patterned resist on the metal film, etching the metal film using the resist as a mask, performing ion implantation into the oxide semiconductor without removing the resist, and removing the resist.


Find Patent Forward Citations

Loading…