The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 19, 2024

Filed:

Jul. 28, 2022
Applicant:

Wuhan China Star Optoelectronics Technology Co., Ltd., Hubei, CN;

Inventor:

Chengzhi Luo, Hubei, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); G02F 1/1368 (2006.01); H01L 27/12 (2006.01); H01L 29/66 (2006.01); H10K 59/12 (2023.01);
U.S. Cl.
CPC ...
H01L 29/78675 (2013.01); G02F 1/13685 (2021.01); H01L 27/1222 (2013.01); H01L 29/66757 (2013.01); H01L 29/78654 (2013.01); G02F 2202/104 (2013.01); H10K 59/12 (2023.02);
Abstract

The present application provides a semiconductor device and an electronic device. In the semiconductor device, a metal layer is provided on the side of the active layer facing the buffer layer, and the metal layer includes at least one metal block, so that the metal block is in direct contact with at least part of the active layer, then when the active layer is converted from amorphous silicon to polycrystalline silicon, due to the catalytic effect of the metal block, the size of the crystal grains in the polycrystalline silicon becomes larger, which reduces the crystal grain boundaries in the polycrystalline silicon and improves the mobility of the semiconductor device.


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