The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2024
Filed:
Apr. 09, 2021
Applicant:
Huawei Technologies Co., Ltd., Shenzhen, CN;
Inventors:
Assignee:
HUAWEI TECHNOLOGIES CO., LTD., Shenzhen, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/28 (2006.01); H01L 21/768 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 29/08 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7851 (2013.01); H01L 21/28123 (2013.01); H01L 21/76834 (2013.01); H01L 21/76897 (2013.01); H01L 21/823431 (2013.01); H01L 21/823475 (2013.01); H01L 27/0886 (2013.01); H01L 29/0847 (2013.01); H01L 29/4983 (2013.01); H01L 29/66636 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/4966 (2013.01);
Abstract
A field-effect transistor structure includes a semiconductor substrate, a metal gate, a metal trench for source, a metal trench for drain, an etching-stop layer, and a gate contact. The etching-stop layer is overlaid on the metal trench for source and the metal trench for drain. The gate contact is above an active region.