The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 19, 2024

Filed:

Dec. 14, 2023
Applicant:

Ideal Power Inc., Austin, TX (US);

Inventors:

Jiankang Bu, Austin, TX (US);

Constantin Bulucea, Santa Clara, CA (US);

Alireza Mojab, Austin, TX (US);

Jeffrey Knapp, Caldwell, NJ (US);

Robert Daniel Brdar, Driftwood, TX (US);

Assignee:

IDEAL POWER INC., Austin, TX (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/747 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/747 (2013.01); H01L 29/083 (2013.01); H01L 29/1012 (2013.01); H01L 29/66386 (2013.01);
Abstract

Bi-directional trench power switches. At least one example is a semiconductor device comprising: an upper base region associated with a first side of a substrate of semiconductor material; an upper-CE trench defined on the first side, the upper-CE trench defines a proximal opening at the first side and a distal end within the substrate; an upper collector-emitter region disposed at the distal end of the upper-CE trench; a lower base region associated with a second side of substrate; and a lower collector-emitter region associated with the second side.


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