The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2024
Filed:
Dec. 25, 2023
Fuji Electric Co., Ltd., Kanagawa, JP;
Motoyoshi Kubouchi, Matsumoto, JP;
FUJI ELECTRIC CO., LTD., Kanagawa, JP;
Abstract
A method of manufacturing a semiconductor device comprising a transistor section and a diode section each having a drift region of a first conductivity-type inside a semiconductor substrate, and a base region of a second conductivity-type above the drift region. A particle beam is irradiated from an upper surface of the semiconductor substrate forming a lifetime control region including lifetime killers below the base region from at least a part of the transistor section to the diode section. A threshold value adjusting section is formed for adjusting a threshold value of the transistor section, including a thickened portion Wgi of a gate insulating film in a gate trench section adjacent to the base region, the thickened portion having a dielectric constant less than or equal to 0.9 times a remaining portion of the gate insulating film in the gate trench section.