The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 19, 2024

Filed:

Feb. 24, 2022
Applicant:

Canon Kabushiki Kaisha, Tokyo, JP;

Inventor:

Junji Iwata, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); G01S 17/08 (2006.01); G01T 1/20 (2006.01); G06T 7/55 (2017.01); H01L 29/861 (2006.01); H01L 31/107 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1461 (2013.01); G01S 17/08 (2013.01); G01T 1/2018 (2013.01); G06T 7/55 (2017.01); H01L 27/14607 (2013.01); H01L 27/1463 (2013.01); H01L 27/14663 (2013.01); H01L 29/8611 (2013.01); H01L 29/8613 (2013.01); H01L 31/107 (2013.01); G06T 2207/30252 (2013.01);
Abstract

There are provided a light detection device and a photoelectric conversion system including the light detection device including an avalanche diode including a first semiconductor region of a first conductivity type disposed at a first depth, a second semiconductor region of a second conductivity type disposed at a second depth deeper than the first depth with respect to the first surface, a third semiconductor region that is disposed at a third depth deeper than the second depth with respect to the first surface and is in contact with the second semiconductor region, and first and second separation regions each extending from the first depth to the third depth. The second semiconductor region and the third semiconductor region each extend from the first separation region to the second separation region. The first semiconductor region, the second semiconductor region, and the third semiconductor region have portions overlapping one another in planar view.


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