The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 19, 2024

Filed:

Jun. 21, 2019
Applicant:

Soitec, Bernin, FR;

Inventors:

Walter Schwarzenbach, Saint Nazaire les Eymes, FR;

Manuel Sellier, Grenoble, FR;

Ludovic Ecarnot, Grenoble, FR;

Assignee:

Soitec, Bernin, FR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1203 (2013.01); H01L 27/1461 (2013.01); H01L 27/1462 (2013.01); H01L 27/1463 (2013.01); H01L 27/14643 (2013.01); H01L 27/14683 (2013.01);
Abstract

The invention relates to a front-side imager comprising in succession: —a semiconductor carrier substrate, a first electrically insulating separating layer, and a single-crystal semiconductor layer, called the active layer, comprising a matrix array of photodiodes, wherein the imager further comprises between the carrier substrate and the first electrically insulating layer: —a second electrically insulating separating layer, and —a second semiconductor or electrically conductive layer, called the intermediate layer, arranged between the second separating layer and the first separating layer, the second separating layer being thicker than the first separating layer.


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