The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2024
Filed:
Sep. 07, 2021
Applicant:
SK Hynix Inc., Icheon-si, KR;
Inventor:
Yoo Hyun Noh, Icheon-si, KR;
Assignee:
SK hynix Inc., Icheon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/544 (2006.01); H10B 43/10 (2023.01); H10B 43/27 (2023.01); H10B 43/35 (2023.01);
U.S. Cl.
CPC ...
H01L 23/544 (2013.01); H10B 43/10 (2023.02); H10B 43/27 (2023.02); H10B 43/35 (2023.02); H01L 2223/54426 (2013.01);
Abstract
The present technology relates to a memory device and a method of manufacturing the same. A memory device according to an embodiment of the present disclosure includes a main chip region, a chip guard region disposed adjacent to the main chip region, a plurality of chip guard patterns formed in the chip guard region, and a buffer slit formed in a space between the plurality of chip guard patterns.
Noh, Yoo. (2024). Memory device and method of manufacturing the same (U.S. Patent No. 12148709). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12148709
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile