The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 19, 2024

Filed:

Jan. 16, 2020
Applicant:

V Technology Co., Ltd., Kanagawa, JP;

Inventors:

Jun Gotoh, Kanagawa, JP;

YingBao Yang, Kanagawa, JP;

Michinobu Mizumura, Kanagawa, JP;

Yoshihiro Shioaku, Kanagawa, JP;

Assignee:

V TECHNOLOGY CO., LTD., Yokohama, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 1/06 (2006.01); B23K 26/00 (2014.01); B23K 26/06 (2014.01); B23K 26/53 (2014.01); H01L 21/02 (2006.01); H01L 29/04 (2006.01); B23K 103/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02691 (2013.01); B23K 26/0006 (2013.01); B23K 26/0604 (2013.01); B23K 26/53 (2015.10); H01L 21/02678 (2013.01); H01L 21/02683 (2013.01); H01L 21/02686 (2013.01); H01L 29/04 (2013.01); B23K 2103/56 (2018.08);
Abstract

A first laser irradiation, in which an amorphous silicon film is irradiated with a first laser beam for transformation of the amorphous silicon film to a microcrystalline silicon film, and a second laser irradiation, in which a second laser beam moves along a unidirectional direction with the microcrystalline silicon film as a starting point for lateral crystal growth of growing crystals constituting a crystallized silicon film, are carried out to form a microcrystalline silicon film and a crystallized silicon film alternately along the unidirectional direction.


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