The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2024
Filed:
Apr. 25, 2022
Fengjie Xie, Shanghai, CN;
Mengyao Xie, Madrid, ES;
Mengyao Xie, Madrid, ES;
Amalia Luisa Fernando Saavedra, Madrid, ES;
Ana María Bengoechea Encabo, Madrid, ES;
Steven Albert, Madrid, ES;
Enrique Calleja Pardo, Madrid, ES;
Miguel Angel Sánchez García, Madrid, ES;
David López-Romero Moraleda, Madrid, ES;
Other;
Abstract
The disclosure is aimed at a method for obtaining non-polar III-Nitride compact layers by coalescence of an ordered-array of etched non-polar 111-Nitride nanopillars. Besides, the disclosure also relates to the non-polar III-Nitride binary and ternary compact, continuous (2D) films, layers, or pseudo-substrates, obtainable by means of the disclosed method and having advantageous properties. The disclosure also includes a specific group of non-polar III-Nitride compact, continuous (2D) films or layers, having one of the components selected from the group consisting of In, Al and both elements, enfolding ordered arrays of non-polar III-Nitride nano-crystals, regardless the method for obtaining thereof, said film or layer being one of the groups consisting of: non-polar InN, non-polar AlN, non-polar GaAlN, non-polar InAlN and non-polar GaxInN, where 0<x<1.