The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2024
Filed:
Jun. 27, 2023
Applicant:
Zeno Semiconductor, Inc., Sunnyvale, CA (US);
Inventor:
Yuniarto Widjaja, Cupertino, CA (US);
Assignee:
Zeno Semiconductor, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 14/00 (2006.01); G06F 3/06 (2006.01); G11C 11/14 (2006.01); G11C 11/402 (2006.01); G11C 11/404 (2006.01); G11C 11/4067 (2006.01); G11C 11/56 (2006.01); G11C 13/00 (2006.01); H01L 27/12 (2006.01); H01L 29/78 (2006.01); H10B 12/00 (2023.01); H10B 12/10 (2023.01); H10B 63/00 (2023.01); H10N 70/00 (2023.01); H10N 70/20 (2023.01);
U.S. Cl.
CPC ...
G11C 14/0045 (2013.01); G06F 3/0619 (2013.01); G06F 3/0647 (2013.01); G06F 3/0685 (2013.01); G11C 11/14 (2013.01); G11C 11/4026 (2013.01); G11C 11/404 (2013.01); G11C 11/4067 (2013.01); G11C 11/5678 (2013.01); G11C 11/5685 (2013.01); G11C 13/0004 (2013.01); G11C 13/0007 (2013.01); G11C 13/0033 (2013.01); G11C 13/004 (2013.01); G11C 13/0069 (2013.01); H01L 27/1203 (2013.01); H01L 29/7841 (2013.01); H10B 12/00 (2023.02); H10B 12/10 (2023.02); H10B 12/20 (2023.02); H10B 12/50 (2023.02); H10B 63/00 (2023.02); H10B 63/32 (2023.02); H10B 63/80 (2023.02); H10N 70/231 (2023.02); H10N 70/235 (2023.02); H10N 70/24 (2023.02); H10N 70/245 (2023.02); H10N 70/826 (2023.02); H10N 70/841 (2023.02); H10N 70/882 (2023.02); H10N 70/8833 (2023.02); H10N 70/8836 (2023.02); G11C 2013/0045 (2013.01); G11C 2013/0078 (2013.01); G11C 2211/4016 (2013.01); G11C 2211/5643 (2013.01); G11C 2213/31 (2013.01); G11C 2213/32 (2013.01); H10N 70/8828 (2023.02);
Abstract
Semiconductor memory is provided wherein a memory cell includes a capacitorless transistor having a floating body configured to store data as charge therein when power is applied to the cell. The cell further includes a nonvolatile memory comprising a resistance change element configured to store data stored in the floating body under any one of a plurality of predetermined conditions. A method of operating semiconductor memory to function as volatile memory, while having the ability to retain stored data when power is discontinued to the semiconductor memory is described.