The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 19, 2024

Filed:

Sep. 25, 2023
Applicants:

Chengdu Boe Optoelectronics Technology Co., Ltd., Chengdu, CN;

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Ke Liu, Beijing, CN;

Ling Shi, Beijing, CN;

Yipeng Chen, Beijing, CN;

Hui Lu, Beijing, CN;

Shuai Xie, Beijing, CN;

Zhu Wang, Beijing, CN;

Zhenhua Zhang, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G09G 3/3258 (2016.01); H10K 59/121 (2023.01); H10K 59/131 (2023.01);
U.S. Cl.
CPC ...
G09G 3/3258 (2013.01); H10K 59/121 (2023.02); H10K 59/131 (2023.02); G09G 2320/0686 (2013.01);
Abstract

A display substrate includes first and second display regions, and a base substrate. A plurality of sub-pixels are arranged on a side of the base substrate, where the-sub-pixels include a first pixel driving circuit and a first light-emitting device connected to each other in the first display region, and the first pixel driving circuit includes at least a compensation transistor, a switching transistor, and a light-emitting device initialization transistor each having an active layer. A scan signal line is provided in the first display region. An orthographic projection of the scan signal line on the base substrate overlaps with that of the active layer of each of the compensation transistor and the light-emitting device initialization transistor, or that of the active layer of each of the switching transistor and the light-emitting device initialization transistor on the base substrate.


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