The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2024
Filed:
Jul. 01, 2024
Hefei Core Storage Electronic Limited, Anhui, CN;
Hefei Core Storage Electronic Limited, Anhui, CN;
Abstract
A memory control method, a memory storage device and a memory control circuit unit are provided. The method includes: setting preset read count thresholds corresponding to physical erasing units respectively; in a background operation, in response to a read count of a first physical erasing unit in the physical erasing units being greater than its corresponding preset read count threshold, reading word lines in the first physical erasing unit to obtain first error bit amounts; determining whether a refresh operation needs to be performed on the first physical erasing unit according to first error bit amounts; in response to no need to perform the refresh operation on the first physical erasing unit, selecting a first word line with the largest first error bit amount in the word lines, and detecting a voltage distribution variation of the first word line; and calculating a new read count threshold of the first physical erasing unit according to the voltage distribution variation.