The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 19, 2024

Filed:

Apr. 10, 2024
Applicant:

Nanjing University, Nanjing, CN;

Inventors:

Feng Zhou, Nanjing, CN;

Wenfeng Wang, Nanjing, CN;

Hai Lu, Nanjing, CN;

Weizong Xu, Nanjing, CN;

Dong Zhou, Nanjing, CN;

Fangfang Ren, Nanjing, CN;

Assignee:

NANJING UNIVERSITY, Nanjing, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G01R 31/28 (2006.01);
U.S. Cl.
CPC ...
G01R 31/2872 (2013.01); G01R 31/2858 (2013.01); G01R 31/2889 (2013.01);
Abstract

The present invention discloses an in-situ testing system for semiconductor device in aerospace irradiation environment. The present invention includes a static testing unit, a static testing channel, a dynamic testing unit, a dynamic testing channel, and a channel switching control unit; the static testing unit is connected to the device under test through the static testing channel, and is used to output static testing signals and display the static testing data of the device under test; the dynamic testing unit is connected to the device under test through the dynamic testing channel, and is used to output dynamic testing signals and display the dynamic testing data of the device under test; the channel switching control unit is connected to the static testing channel and the dynamic testing channel, respectively. This invention can achieve static, dynamic, and degradation testing of third-generation semiconductor device in aerospace irradiation environment.


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