The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2024
Filed:
Jun. 27, 2022
Imec Vzw, Leuven, BE;
Anne Verhulst, Houtvenne, BE;
Pol Van Dorpe, Spalbeek, BE;
IMEC VZW, Leuven, BE;
Abstract
A method of operating a pore field-effect transistor (FET) sensor for detecting particles, wherein the pore FET sensor comprises a FET wherein a gate is controlled by a pore filled by a fluid, comprises: controlling a first voltage (V) to set the FET in a subthreshold region; controlling a second voltage (V) to set a voltage difference between the first and second voltages (V) such that an effective difference in gate voltage experienced between a minimum and a maximum effective gate voltage during movement of a particle in the fluid is at least kT/q; and detecting a drain-source current in the FET, wherein the particle passing through the pore modulates the drain-source current for detecting presence of the particle.