The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2024
Filed:
Dec. 03, 2022
Huazhong University of Science and Technology, Hubei, CN;
HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY, Hubei, CN;
Abstract
The present invention provides a Ga-based van der Waals room-temperature ferromagnetic crystal material, preparation and use thereof, which belong to the technical field of nano magnetic material preparation. The materials include FeGaTe(a=−0.3 to 0.1, b=0.8 to 1.2) and FeGeGaTe(c=−0.2 to 0.2, d=0.01 to 0.5). The growth method of FeGaTe(a=−0.3 to 0.1, b=0.8 to 1.2) is a self-flux method, using excess Ga and Te as flux to grow crystals. The growth method of FeGeGaTe(c=−0.2 to 0.2, d=0.01 to 0.5) uses iodine as a transport agent to grow crystals. The Ga-based van der Waals room-temperature ferromagnetic crystal FeGaTe(a=−0.3 to 0.1, b=0.8 to 1.2) and FeGeGaTe(c=−0.2 to 0.2, d=0.01 to 0.5) materials have Curie temperature of 330 K to 367 K and 320 K to 345 K, and the saturation magnetic moments are 50 emu/g to 57.2 emu/g and 80 emu/g to 88.5 emu/g, respectively.