The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2024
Filed:
Sep. 30, 2021
International Business Machines Corporation, Armonk, NY (US);
Ashim Dutta, Clifton Park, NY (US);
Lili Cheng, Rexford, NY (US);
Chih-Chao Yang, Glenmont, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A semiconductor device, such as an MRAM device, includes a stepped contact within a memory region that has a greater number of different contact structures (i.e., contact structures formed in different fabrication stages) relative to a logic region contact. The stepped contact includes a lower stepped contact and an upper stepped contact. The inclusion of the lower stepped contact allows for a relatively shorter upper stepped contact compared to the logic region contact. The stepped contact may allow the use of a multi-layer encapsulation spacer upon the sidewalls of a memory cell that fill out tight spacing therebetween, which may decrease the propensity of void formation and resulting shorting between neighboring memory cell features.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile