The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 12, 2024

Filed:

Sep. 07, 2022
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Hidehiro Shiga, Yokohama Kanagawa, JP;

Daisaburo Takashima, Yokohama Kanagawa, JP;

Assignee:

Kioxia Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 11/16 (2006.01); G11C 13/00 (2006.01); H10B 61/00 (2023.01); H10B 63/00 (2023.01); H10N 50/80 (2023.01); H10N 70/00 (2023.01);
U.S. Cl.
CPC ...
H10B 63/845 (2023.02); G11C 11/1673 (2013.01); G11C 11/1675 (2013.01); G11C 13/004 (2013.01); G11C 13/0069 (2013.01); H10B 61/22 (2023.02); H10B 63/34 (2023.02); H10N 50/80 (2023.02); H10N 70/8413 (2023.02); G11C 2213/71 (2013.01); G11C 2213/75 (2013.01); G11C 2213/79 (2013.01);
Abstract

According to a certain embodiment, the 3D stacked semiconductor memory includes: a first electrode line extending in a first direction orthogonal to the semiconductor substrate; a second electrode line adjacent to the first electrode line in a second direction orthogonal to the first direction, and extending in the first direction; a first variable resistance film extending in the first direction and in contact with the second electrode line; a first semiconductor film in contact with the first variable resistance film and the first electrode line; a first potential applying electrode extending in the second direction and in contact with a first insulator layer; a second semiconductor film in contact with a second variable resistance film and the first electrode line; and a second potential applying electrode extending in the second direction and in contact with a second insulator layer. The first and second potential applying electrodes are electrically different nodes.


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