The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 12, 2024

Filed:

Jun. 11, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jaehun Lee, Suwon-si, KR;

Youngcheon Jeong, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H10B 63/00 (2023.01); H10N 70/00 (2023.01); H10N 70/20 (2023.01);
U.S. Cl.
CPC ...
H10B 63/30 (2023.02); H10N 70/011 (2023.02); H10N 70/24 (2023.02); H10N 70/8265 (2023.02); H10N 70/841 (2023.02); H10N 70/8833 (2023.02);
Abstract

A variable-resistance memory device includes a substrate, an insulating layer disposed on the substrate and having a contact hole, a contact structure filling a lower region of the contact hole, a first electrode layer having a first portion disposed on the contact structure and a second portion extending to a side wall of an upper region of the contact hole, a variable-resistance layer covering the first electrode layer in the upper region of the contact hole, a sidewall spacer disposed between the second portion of the first electrode layer and the variable-resistance layer in the upper region of the contact hole, and a second electrode layer disposed on the variable-resistance layer in the upper region of the first contact hole.


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Lee, Jaehun. (2024). Variable-resistance memory device (U.S. Patent No. 12144186). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12144186

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