The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2024
Filed:
Feb. 02, 2022
Applicants:
Western Digital Technologies, Inc., San Jose, CA (US);
Pohang University of Science and Technology, Pohang, KR;
Inventors:
Oleksandr Mosendz, Campbell, CA (US);
Hyunsang Hwang, Pohang, KR;
Jangseop Lee, Pohang, KR;
Raghuveer S. Makala, Campbell, CA (US);
Assignees:
Sandisk Technologies, Inc., Milpitas, CA (US);
POHANG UNIVERSITY OF SCIENCE AND TECHNOLOGY, Pohang, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 63/00 (2023.01); H10N 70/00 (2023.01); H10N 70/20 (2023.01);
U.S. Cl.
CPC ...
H10B 63/24 (2023.02); H10N 70/231 (2023.02); H10N 70/823 (2023.02);
Abstract
A method includes forming a first electrode layer over a substrate, forming an ovonic threshold switch (OTS) material layer over the first electrode layer, microwave annealing the OTS material layer, and forming a second electrode layer over the OTS material layer.