The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 12, 2024

Filed:

Jul. 10, 2019
Applicant:

Epicmems(xiamen) Co., Ltd., Fujian, CN;

Inventors:

Wei Wang, Fujian, CN;

Ping Li, Fujian, CN;

Nianchu Hu, Fujian, CN;

Bin Jia, Fujian, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03H 3/02 (2006.01); H03H 9/17 (2006.01); H03H 9/205 (2006.01); H03H 9/58 (2006.01);
U.S. Cl.
CPC ...
H03H 9/173 (2013.01); H03H 3/02 (2013.01); H03H 9/205 (2013.01); H03H 9/587 (2013.01); H03H 2003/021 (2013.01);
Abstract

A method of manufacturing a bulk acoustic wave filter is provided, including: forming an acoustic reflection air cavity, a sacrificial layer, a seed layer, a lower electrode layer and a piezoelectric layer of n resonators on a substrate in sequence, wherein n is greater than or equal to 2; taking N from 1 to n for respectively repeating following steps: forming an N-th metal hard mask layer, defining an effective area of a first resonator to an N-th resonator by using a photolithography process, removing the N-th metal hard mask layer outside the effective area of the first resonator to the N-th resonator, oxidizing the piezoelectric layer outside the effective area of the first resonator to the N-th resonator to form an N-th oxidized part of the piezoelectric layer, and etching the N-th oxidized part of the piezoelectric layer; removing the metal hard mask layer of the effective area of the first resonator to the N-th resonator, so as to form the piezoelectric layer having different thicknesses of the first resonator to the N-th resonator; and forming an upper electrode layer on the piezoelectric layer having different thicknesses of the first resonator to the N-th resonator.


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