The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 12, 2024

Filed:

Jun. 06, 2022
Applicant:

Playnitride Display Co., Ltd., MiaoLi County, TW;

Inventors:

Yun-Li Li, MiaoLi County, TW;

Tzu-Yang Lin, MiaoLi County, TW;

Ying-Tsang Liu, MiaoLi County, TW;

Chih-Ling Wu, MiaoLi County, TW;

Assignee:

PlayNitride Display Co., Ltd., MiaoLi County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 27/15 (2006.01); H01L 33/48 (2010.01);
U.S. Cl.
CPC ...
H01L 33/0093 (2020.05); H01L 27/156 (2013.01); H01L 33/486 (2013.01);
Abstract

A micro light emitting diode panel is provided. The micro light emitting diode panel includes a circuit substrate, a plurality of transistor devices and a plurality of micro light emitting diode devices. The transistor devices are bonded to the circuit substrate. Each of the transistor devices has a semiconductor pattern, a source electrode, a drain electrode and a gate electrode. The source electrode and the drain electrode are electrically connected to the semiconductor pattern. The source electrode, the drain electrode, and the gate electrode are located between the semiconductor pattern and the circuit substrate. The electron mobility of the semiconductor pattern is greater than 20 cm/V·s. The micro light emitting diode devices are bonded to the circuit substrate, and are electrically connected to the transistor devices respectively.


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