The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 12, 2024

Filed:

Dec. 06, 2023
Applicants:

Jinko Solar (Haining) Co., Ltd., Haining, CN;

Zhejiang Jinko Solar Co., Ltd., Haining, CN;

Inventors:

Bike Zhang, Haining, CN;

Bo Zhang, Haining, CN;

Xinyu Zhang, Haining, CN;

Jingsheng Jin, Haining, CN;

Zhaoxuan Liu, Haining, CN;

Ziqi Guo, Haining, CN;

Assignees:

ZHEJIANG JINKO SOLAR CO., LTD., Haining Zhejiang, CN;

JINKO SOLAR (HAINING) CO., LTD., Haining Zhejiang, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0216 (2014.01); H01L 31/048 (2014.01);
U.S. Cl.
CPC ...
H01L 31/02168 (2013.01); H01L 31/048 (2013.01);
Abstract

Provided are a solar cell and a photovoltaic module. The solar cell includes: an N-type silicon substrate, where the N-type silicon substrate has a front surface and a rear surface opposite to the front surface; a passivation layer that contains an aluminum oxide material and that is located on the front surface; a first antireflection layer, a second antireflection layer, and a third antireflection layer that are located on a side of the passivation layer away from the substrate and stacked in a direction in which the substrate points to the passivation layer, where the first antireflection layer contains a silicon nitride material, the second antireflection layer contains a silicon oxynitride material; and the third antireflection layer contains a silicon oxide material; a tunneling dielectric layer located on the rear surface; and a doped conductive layer located on the tunneling dielectric layer.


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