The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2024
Filed:
Sep. 07, 2020
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;
Hitoshi Kunitake, Kanagawa, JP;
Yuichi Yanagisawa, Kanagawa, JP;
Shota Mizukami, Hokkai-do, JP;
Kazuki Tsuda, Kanagawa, JP;
Haruyuki Baba, Kanagawa, JP;
Shunpei Yamazaki, Tokyo, JP;
Abstract
A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a first insulator; a first oxide over the first insulator; a second oxide over the first oxide; a first conductor, a second conductor, a third oxide, a fourth oxide, and a second insulator over the second oxide; a third insulator over the first conductor, the second conductor, the third oxide, and the fourth oxide; a fourth insulator over the second insulator; and a third conductor over the fourth insulator. The second insulator is positioned between the first conductor and the second conductor. The third oxide is positioned between the first conductor and the second insulator. The fourth oxide is positioned between the second conductor and the second insulator. The thickness of the third oxide between the first conductor and the second insulator is greater than or equal to 3 nm and less than or equal to 8 nm. The thickness of the fourth oxide between the second conductor and the second insulator is greater than or equal to 3 nm and less than or equal to 8 nm.