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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12142687 B1

PDFFull Text
Date of Patent:
Nov. 12, 2024

Filed:

Jan. 11, 2022

Active device substrate and fabrication method of active device substrate

Applicant:

AU Optronics Corporation, Hsinchu, TW;

Inventors:

Chen-Shuo Huang, Hsinchu, TW;

Kuo-Kuang Chen, Hsinchu, TW;

Chih-Ling Hsueh, Hsinchu, TW;

Assignee:

Au Optronics Corporation, Hsinchu, TW;

Attorney:

JCIPRNET

Primary Examiner:

Christine A Enad

Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 21/02 (2006.01); H01L 27/12 (2006.01); H01L 29/66 (2006.01); H10K 59/121 (2023.01);
U.S. Cl.
CPC ...
H01L 29/78606 (2013.01); H01L 21/0217 (2013.01); H01L 21/02274 (2013.01); H01L 21/02565 (2013.01); H01L 27/1225 (2013.01); H01L 27/127 (2013.01); H01L 29/66969 (2013.01); H01L 29/78633 (2013.01); H01L 29/78648 (2013.01); H01L 29/7869 (2013.01); H10K 59/1213 (2023.02);
Abstract

An active device substrate includes a substrate, an active device and a barrier layer. The active device is located on the substrate. The barrier layer is located on the active device. The barrier layer includes a first hydrogen atom distribution region and a second hydrogen atom distribution region. The first hydrogen atom distribution region includes silicon nitride and hydrogen atom. The first hydrogen atom distribution region is located between the second hydrogen atom distribution region and the substrate. The second hydrogen atom distribution region includes silicon nitride and hydrogen atom. The concentration of nitrogen atom in the first hydrogen atom distribution region is less than the concentration of nitrogen atom in the second hydrogen atom distribution region. The highest concentration of hydrogen atom in the first hydrogen atom distribution region is greater than the highest concentration of hydrogen atom in the second hydrogen atom distribution region.

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