The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 12, 2024

Filed:

Jun. 04, 2021
Applicant:

SK Hynix Inc., Gyeonggi-do, KR;

Inventors:

Nam Kyeong Kim, Gyeonggi-do, KR;

Yeong Jo Mun, Gyeonggi-do, KR;

Assignee:

SK hynix Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 21/28 (2006.01); H10B 43/27 (2023.01); H10B 43/40 (2023.01);
U.S. Cl.
CPC ...
H01L 29/4234 (2013.01); H01L 29/40117 (2019.08); H10B 43/27 (2023.02); H10B 43/40 (2023.02);
Abstract

A three-dimensional semiconductor device is provided. The three-dimensional device may include substrate; a common electrode layer on the substrate; a word line stack disposed on the common electrode layer, the word line stack having interlayer insulating layers and word lines structures alternately stacked and; and a vertical channel pillar penetrating the word line stack, the vertical channel pillar being electrically connected to the common electrode layer. Each of the word line structures includes a body portion having a first vertical width and an extension portion having a second vertical width greater than the first vertical width. The extension portion abuts the vertical channel pillar.


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