The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 12, 2024

Filed:

Oct. 01, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Seon-Bae Kim, Hwaseong-si, KR;

Kyungin Choi, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4232 (2013.01); H01L 27/088 (2013.01); H01L 29/41775 (2013.01);
Abstract

A semiconductor device is disclosed. The semiconductor device may include a semiconductor substrate including a protruding active pattern, a first gate pattern provided on the active pattern and extended to cross the active pattern, a first capping pattern provided on a top surface of the first gate pattern, the first capping pattern having a top surface, a side surface, and a rounded edge, and a first insulating pattern covering the side surface and the edge of the first capping pattern. A thickness of the first insulating pattern on the edge of the first capping pattern is different from a thickness of the first insulating pattern on outer side surfaces of the spacer patterns.


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