The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2024
Filed:
Mar. 03, 2023
Panasonic Holdings Corporation, Kadoma, JP;
PANASONIC HOLDINGS CORPORATION, Osaka, JP;
Abstract
A nitride semiconductor device includes a substrate, a drift layer and a block layer sequentially provided above the substrate, a gate opening penetrating through a block layer and reaching a drift layer, an electron transit layer and an electron supply layer sequentially provided above the block layer and along the inner surface of the gate opening, a gate electrode provided to cover the gate opening, a source opening penetrating through an electron supply layer and an electron transit layer and reaching the block layer, a source electrode provided in the source opening, and a drain electrode on the rear surface side of the substrate. Seen in a plan view, at least part of an outline of an end of the gate opening in the longitudinal direction follows an arc or an elliptical arc.