The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 12, 2024

Filed:

Oct. 30, 2020
Applicant:

Quantum-si Incorporated, Guilford, CT (US);

Inventors:

Farshid Ghasemi, Guilford, CT (US);

Todd Rearick, Cheshire, CT (US);

Assignee:

Quantum-Si Incorporated, Branford, CT (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); C12Q 1/6869 (2018.01); G01N 21/64 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1461 (2013.01); C12Q 1/6869 (2013.01); G01N 21/6428 (2013.01); H01L 27/14643 (2013.01); H01L 27/14689 (2013.01); G01N 2021/6439 (2013.01);
Abstract

Some embodiments relate to an integrated circuit, comprising: a pixel, comprising: a photodetection region; and a drain configured to discard charge carriers from within a semiconductor region of the pixel outside of the photodetection region. Some embodiments relate to an integrated circuit, comprising: a pixel, comprising: a photodetection region; and a drain configured to discard charge carriers from the photodetection region, wherein the drain comprises a semiconductor region and the semiconductor region is contacted by a metal contact. Some embodiments relate to an integrated circuit, comprising: a pixel, comprising: a photodetection region; and a drain configured to discard charge carriers from the photodetection region, wherein the drain comprises a semiconductor region that to which electrical contact is made through a conductive path that does not include a polysilicon electrode.


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