The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2024
Filed:
Aug. 10, 2023
Samsung Electronics Co., Ltd., Suwon-si, KR;
Jinho Park, Seoul, KR;
Chin Kim, Seongnam-si, KR;
Yongseung Bang, Suwon-si, KR;
Jiyeon Baek, Yongin-si, KR;
Jeong Hoon Ahn, Seongnam-si, KR;
Abstract
Disclosed are semiconductor devices and methods of fabricating the same. The semiconductor device includes a first dielectric layer including a first pad, a second dielectric layer on the first dielectric layer, a through electrode that penetrates the second dielectric layer and is electrically connected to the first pad, an upper passivation layer on the second dielectric layer, a second pad on the upper passivation layer, and an upper barrier layer between the upper passivation layer and the second pad. The first pad and the through electrode include a first material. The second pad includes a second material that is different from the first material of the first pad and the through electrode. The second pad includes a first part on the upper passivation layer, and a second part that extends from the first part into the upper passivation layer and is connected to the through electrode.